IRF7341QTRPBF parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

IRF7341QTRPBF

Description:

MOSFET 2N-CH 55V 5.1A 8-SOIC

Stock:

4232

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：+86 19166251823(Wechat)

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Parameters

Current at 25 ° C - continuous drain (Id)

5.1A

Drain source voltage (Vdss)

55V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

44nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

780pF @ 25V

On resistance (maximum) for different Ids and Vgs

50 mΩ @ 5.1A,10V

Power - maximum

2.4W

Vgs (th) (maximum) for different Ids

1V @ 250µA(min)

packing

series

working temperature

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

IRF7341QTRPBF（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory4232,Price reference "real-time change" China/Hongkong。 IRF7341QTRPBF package/specs, Download IRF7341QTRPBF、Datasheet。